Invention Grant
US08445301B2 Thin-film transistor substrate, method of manufacturing the same, and display device including the same
有权
薄膜晶体管基板及其制造方法以及包括该薄膜晶体管基板的显示装置
- Patent Title: Thin-film transistor substrate, method of manufacturing the same, and display device including the same
- Patent Title (中): 薄膜晶体管基板及其制造方法以及包括该薄膜晶体管基板的显示装置
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Application No.: US13027453Application Date: 2011-02-15
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Publication No.: US08445301B2Publication Date: 2013-05-21
- Inventor: Kap-Soo Yoon , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
- Applicant: Kap-Soo Yoon , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2010-0015184 20100219
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.
Public/Granted literature
- US20110204370A1 Thin-Film Transistor Substrate, Method of Manufacturing the Same, and Display Device Including the Same Public/Granted day:2011-08-25
Information query
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