Invention Grant
- Patent Title: Method of fabricating a differential doped solar cell
- Patent Title (中): 制造差分掺杂太阳能电池的方法
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Application No.: US13303126Application Date: 2011-11-22
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Publication No.: US08445311B2Publication Date: 2013-05-21
- Inventor: Chi-Hsiung Chang , Kuan-Lun Chang , Hung-Yi Chang , Yi-Min Pan , Jun-Min Wu , Ying-Yen Chiu
- Applicant: Chi-Hsiung Chang , Kuan-Lun Chang , Hung-Yi Chang , Yi-Min Pan , Jun-Min Wu , Ying-Yen Chiu
- Applicant Address: TW Hsinchu County
- Assignee: Big Sun Energy Technology Incorporation
- Current Assignee: Big Sun Energy Technology Incorporation
- Current Assignee Address: TW Hsinchu County
- Agency: HDLS IPR Services
- Agent Chun-Ming Shih
- Priority: TW99145205A 20101222
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of fabricating a differential doped solar cell is provided. The method comprises the steps of (a) providing a light doped semiconductor substrate; (b) forming a heavy doped layer having the same type of dopant used in step (a) on a front surface of the semiconductor substrate; and (c) forming an emitter layer having a different type of dopant used in step (a) on a surface of the heavy doped layer to constitute a p-n junction with the heavy doped layer.
Public/Granted literature
- US20120164779A1 METHOD OF FABRICATING A DIFFERENTIAL DOPED SOLAR CELL Public/Granted day:2012-06-28
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