Invention Grant
US08445316B2 Non-lithographic method of patterning contacts for a photovoltaic device
有权
图案化用于光伏器件的接触的非平版印刷方法
- Patent Title: Non-lithographic method of patterning contacts for a photovoltaic device
- Patent Title (中): 图案化用于光伏器件的接触的非平版印刷方法
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Application No.: US13162712Application Date: 2011-06-17
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Publication No.: US08445316B2Publication Date: 2013-05-21
- Inventor: Ali Afzali-Ardakani , Jeffrey C. Hedrick , Mahmoud Khojasteh , Young-Hee Kim
- Applicant: Ali Afzali-Ardakani , Jeffrey C. Hedrick , Mahmoud Khojasteh , Young-Hee Kim
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/0224

Abstract:
A dielectric material layer is formed on a front surface of a photovoltaic device. A patterned PMMA-type-material-including layer is formed on the dielectric material layer, and the pattern is transferred into the top portion of the photovoltaic device to form trenches in which contact structures can be formed. In one embodiment, a blanket PMMA-type-material-including layer is deposited on the dielectric material layer, and is patterned by laser ablation that removes ablated portions of PMMA-type-material. The PMMA-type-material-including layer may also include a dye to enhance absorption of the laser beam. In another embodiment, a blanket PMMA-type-material-including layer may be deposited on the dielectric material layer and mechanically patterned to form channels therein. In yet another embodiment, a patterned PMMA-type-material-including layer is stamped on top of the dielectric material layer.
Public/Granted literature
- US20120322200A1 NON-LITHOGRAPHIC METHOD OF PATTERNING CONTACTS FOR A PHOTOVOLTAIC DEVICE Public/Granted day:2012-12-20
Information query
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