Invention Grant
- Patent Title: Phase change memory devices including phase change layer formed by selective growth methods and methods of manufacturing the same
- Patent Title (中): 相变存储器件包括通过选择性生长方法形成的相变层及其制造方法
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Application No.: US13064410Application Date: 2011-03-23
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Publication No.: US08445318B2Publication Date: 2013-05-21
- Inventor: Woong-chul Shin
- Applicant: Woong-chul Shin
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0007236 20070123
- Main IPC: H01L21/06
- IPC: H01L21/06
Abstract:
A phase change memory device including a phase change layer includes a storage node and a switching device. The switching device is connected to the storage node. The storage node includes a phase change layer selectively grown directly on a lower electrode. In a method of manufacturing a phase change memory device, an insulating interlayer is formed on a semiconductor substrate to cover a switching device. A lower electrode connected to the switching device is formed, and a phase change layer is selectively grown directly on the lower electrode.
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