Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13347081Application Date: 2012-01-10
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Publication No.: US08445350B2Publication Date: 2013-05-21
- Inventor: Dong Hee Han
- Applicant: Dong Hee Han
- Applicant Address: KR Icheon
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2011-0022001 20110311
- Main IPC: H01L21/8249
- IPC: H01L21/8249 ; H01L21/8242 ; H01L21/8244 ; H01L21/8246
Abstract:
According to an embodiment of a semiconductor device and a method of manufacturing the same, buried gates are formed in a semiconductor substrate including a cell region and a peripheral region, with the cell region and the peripheral region formed to have a step therebetween. Next, a spacer is formed in a region between the cell region and the peripheral region to block an oxidation path between a gate oxide layer and another insulating layer. Embodiments may reduce damage to active regions and prevent IDD failure because a gate pattern is formed on a guard region provided at a periphery of the cell region.
Public/Granted literature
- US20120228678A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-09-13
Information query
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