A phase change memory device capable of fully discharging bit lines, even while occupying a relatively small area, and a fabricating method thereof are presented. The phase change memory device includes a semiconductor substrate, a word line area, a discharge line area, a switching PN diode, a dummy PN diode, a phase change structure, and a bit line. The word line area is formed in a memory cell area of the semiconductor substrate. The discharge line area is formed in the bit-line discharge area of the semiconductor substrate. The switching PN diode is formed on the word line area. The dummy PN diode is formed on the discharge line area. The phase change structure is formed on the switching PN diode and is electrically connected to the switching diode. The bit line is electrically connected to the phase change structure and the dummy PN diode.