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US08445886B2 Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method of manufacturing nonvolatile memory element 有权
非易失性存储元件，非易失性存储器件，非易失性半导体器件以及制造非易失性存储元件的方法

Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method of manufacturing nonvolatile memory element
Abstract:
A nonvolatile memory element comprises a first electrode (103); a second electrode (105); and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), resistance values of the resistance variable layer reversibly changing in response to electric signals applied between the electrodes (103, 105); the resistance variable layer (104) including a first tantalum oxide layer (107) comprising a first tantalum oxide and a second tantalum oxide layer (108) comprising a second tantalum oxide which is different in oxygen content from the first tantalum oxide, the first tantalum oxide layer and the second tantalum oxide layer being stacked together, and being configured such that 0
Abstract(Chinese):

非易失性存储元件包括第一电极（103）; 第二电极（105）; 以及设置在所述第一电极（103）和所述第二电极（105）之间的电阻变化层（104），所述电阻变化层的电阻值响应于施加在所述电极（103,105）之间的电信号而可逆地变化; 电阻变化层（104）包括包含第一钽氧化物的第一钽氧化物层（107）和包含与第一钽氧化物不同氧含量的第二氧化钽的第二钽氧化物层（108），第一钽 氧化物层和第二钽氧化物层堆叠在一起，并且被配置为当第一钽氧化物表示为TaO x时满足0

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