Invention Grant
- Patent Title: Organic thin film transistor
- Patent Title (中): 有机薄膜晶体管
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Application No.: US12388119Application Date: 2009-02-18
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Publication No.: US08445894B2Publication Date: 2013-05-21
- Inventor: Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
- Applicant: Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
- Applicant Address: JP Tokyo JP Fukuoka-shi
- Assignee: Idemitsu Kosan Co., Ltd.,Kyusyu University
- Current Assignee: Idemitsu Kosan Co., Ltd.,Kyusyu University
- Current Assignee Address: JP Tokyo JP Fukuoka-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-039683 20060216
- Main IPC: H01L29/08
- IPC: H01L29/08

Abstract:
A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH═CH—C6H5, or a distyryl structure expressed by C6H5—CH═CH—C6H5—CH═CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.
Public/Granted literature
- US20090159878A1 ORGANIC THIN FILM TRANSISTOR Public/Granted day:2009-06-25
Information query
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