Invention Grant
US08445904B2 Transparent rectifying metal/metal oxide/semiconductor contact structure and method for the production thereof and use
有权
透明整流金属/金属氧化物/半导体接触结构及其制造方法及用途
- Patent Title: Transparent rectifying metal/metal oxide/semiconductor contact structure and method for the production thereof and use
- Patent Title (中): 透明整流金属/金属氧化物/半导体接触结构及其制造方法及用途
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Application No.: US13380054Application Date: 2010-06-21
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Publication No.: US08445904B2Publication Date: 2013-05-21
- Inventor: Marius Grundmann , Heiko Frenzel , Alexander Lajn , Holger von Wenckstern
- Applicant: Marius Grundmann , Heiko Frenzel , Alexander Lajn , Holger von Wenckstern
- Applicant Address: DE Leipzig
- Assignee: Universität Leipzig
- Current Assignee: Universität Leipzig
- Current Assignee Address: DE Leipzig
- Agent Gudrun E. Huckett
- Priority: DE102009030045 20090622
- International Application: PCT/EP2010/058726 WO 20100621
- International Announcement: WO2010/149616 WO 20101229
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
The invention relates to transparent rectifying contact structures for application in electronic devices, in particular appertaining to optoelectronics, solar technology and sensor technology, and also a method for the production thereof. The transparent rectifying contact structure according to the invention has the following constituents: a) a transparent semiconductor, b) a transparent, non-insulating and non-conducting layer composed of metal oxide, metal sulphide and/or metal nitride, the resistivity of which is preferably in the range of 102 Ωcm to 107 Ωcm and c) a layer composed of a transparent electrical conductor wherein the layer b) is formed between the semiconductor a) and the layer c) and the composition of the layer b) is defined in greater detail in the description of the patent.
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