Invention Grant
- Patent Title: Thermal enhancement for multi-layer semiconductor stacks
- Patent Title (中): 多层半导体堆叠的热增强
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Application No.: US12855854Application Date: 2010-08-13
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Publication No.: US08445918B2Publication Date: 2013-05-21
- Inventor: Gerald K. Bartley , Russell Dean Hoover , Charles Luther Johnson , Steven Paul VanderWiel
- Applicant: Gerald K. Bartley , Russell Dean Hoover , Charles Luther Johnson , Steven Paul VanderWiel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Wood, Herron & Evans LLP
- Main IPC: H01L31/0312
- IPC: H01L31/0312

Abstract:
A circuit arrangement and method in one aspect utilize thermal-only through vias, extending between the opposing faces of stacked semiconductor dies, to increase the thermal conductivity of a multi-layer semiconductor stack. The thermal vias are provided in addition to data-carrying through vias, which communicate data signals between circuit layers, and power-carrying through vias, which are coupled to a power distribution network for the circuit layers, such that the thermal conductivity is increased above that which may be provided by the data-carrying and power-carrying through vias in the stack. A circuit arrangement and method in another aspect organize the circuit layers in a multi-layer semiconductor stack based upon current density so as to reduce power distribution losses in the stack.
Public/Granted literature
- US20120038057A1 THERMAL ENHANCEMENT FOR MULTI-LAYER SEMICONDUCTOR STACKS Public/Granted day:2012-02-16
Information query
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