Invention Grant
US08445930B2 Nitride semiconductor element, methods for manufacturing nitride semiconductor element and nitride semiconductor layer, and nitride semiconductor light-emitting element
有权
氮化物半导体元件，氮化物半导体元件及氮化物半导体层的制造方法以及氮化物半导体发光元件
- Patent Title: Nitride semiconductor element, methods for manufacturing nitride semiconductor element and nitride semiconductor layer, and nitride semiconductor light-emitting element
- Patent Title (中): 氮化物半导体元件，氮化物半导体元件及氮化物半导体层的制造方法以及氮化物半导体发光元件
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Application No.: US12849509Application Date: 2010-08-03
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Publication No.: US08445930B2Publication Date: 2013-05-21
- Inventor: Satoshi Komada
- Applicant: Satoshi Komada
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Morrison & Foerster LLP
- Priority: JP2009-201602 20090901; JP2010-134988 20100614
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
Described herein is a method for manufacturing a nitride semiconductor layer by stacking, on a silicon nitride layer, the first nitride semiconductor layer having a surface inclined with respect to the surface of the silicon nitride layer and then stacking the second nitride semiconductor layer on the first nitride semiconductor layer, a nitride semiconductor element and a nitride semiconductor light-emitting element each including the nitride semiconductor layer; and a method for manufacturing the nitride semiconductor element.
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