Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
-
Application No.: US13010191Application Date: 2011-01-20
-
Publication No.: US08445943B2Publication Date: 2013-05-21
- Inventor: Hiroshi Furuta
- Applicant: Hiroshi Furuta
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2010-011244 20100121
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A semiconductor integrated circuit device includes: a plurality of data holding circuits; and a plurality of wells. The plurality of data holding circuits is provided in a substrate of a first conductive type. Each of the plurality of data holding circuits includes a first well of the first conductive type and a second well of a second conductive type different from the first conductive type. The plurality of wells is arranged in two directions for the each of the plurality of data holding circuits.
Public/Granted literature
- US20110175197A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2011-07-21
Information query
IPC分类:
