Invention Grant
US08445961B2 Measuring floating body voltage in silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET)
失效
测量绝缘体上硅（SOI）金属氧化物半导体场效应晶体管（MOSFET）中的浮体电压
- Patent Title: Measuring floating body voltage in silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET)
- Patent Title (中): 测量绝缘体上硅（SOI）金属氧化物半导体场效应晶体管（MOSFET）中的浮体电压
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Application No.: US12886064Application Date: 2010-09-20
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Publication No.: US08445961B2Publication Date: 2013-05-21
- Inventor: Sourabh Khandelwal , Josef S. Watts
- Applicant: Sourabh Khandelwal , Josef S. Watts
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Anthony J. Canale
- Main IPC: H01L27/01
- IPC: H01L27/01
Abstract:
In one embodiment, a body region of a body-contacted silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) is connected to a gate of another MOSFET in a sensing circuit to form a floating body node. The voltage at the floating body node is accurately obtained at the output of the sensing circuit and used to provide an estimate of required floating body voltage over a full device operating range.
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