Invention Grant
- Patent Title: Fin transistor structure and method of fabricating the same
- Patent Title (中): 翅片晶体管结构及其制造方法
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Application No.: US12937486Application Date: 2010-06-24
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Publication No.: US08445973B2Publication Date: 2013-05-21
- Inventor: Zhijiong Luo , Huilong Zhu , Haizhou Yin
- Applicant: Zhijiong Luo , Huilong Zhu , Haizhou Yin
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Osha Liang LLP
- Priority: CN200910244515 20091230
- International Application: PCT/CN2010/074396 WO 20100624
- International Announcement: WO2011/079595 WO 20110707
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/02 ; H01L29/78 ; H01L21/336 ; H01L21/3205 ; H01L21/4763 ; H01L21/31 ; H01L21/469
Abstract:
There is provided a fin transistor structure and a method of fabricating the same. The fin transistor structure comprises a fin formed on a semiconductor substrate, wherein an insulation material is formed between a portion of the fin serving as the channel region of the transistor structure and the substrate, and a bulk semiconductor material is formed between remaining portions of the fin and the substrate. Thereby, it is possible to reduce the current leakage while maintaining the advantages such as low cost and high heat transfer.
Public/Granted literature
- US20110316080A1 FIN TRANSISTOR STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-12-29
Information query
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