Invention Grant
- Patent Title: Electromechanical transducer device and method of forming a electromechanical transducer device
- Patent Title (中): 机电换能器装置及形成机电换能装置的方法
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Application No.: US13128035Application Date: 2009-11-25
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Publication No.: US08445978B2Publication Date: 2013-05-21
- Inventor: Francois Perruchot , Emmanuel Defay , Patrice Rey , Lianjun Liu , Sergio Pacheco
- Applicant: Francois Perruchot , Emmanuel Defay , Patrice Rey , Lianjun Liu , Sergio Pacheco
- Applicant Address: US TX Austin FR Paris
- Assignee: Freescale Semiconductor, Inc.,Commissariat à l'Energie Atomique et aux Energies Alternatives (CEA)
- Current Assignee: Freescale Semiconductor, Inc.,Commissariat à l'Energie Atomique et aux Energies Alternatives (CEA)
- Current Assignee Address: US TX Austin FR Paris
- Priority: WOPCT/IB2008/055652 20081126
- International Application: PCT/IB2009/056020 WO 20091125
- International Announcement: WO2010/061364 WO 20100603
- Main IPC: G01P15/08
- IPC: G01P15/08

Abstract:
A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state.
Public/Granted literature
- US20110233693A1 ELECTROMECHANICAL TRANSDUCER DEVICE AND METHOD OF FORMING A ELECTROMECHANICAL TRANSDUCER DEVICE Public/Granted day:2011-09-29
Information query
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