Invention Grant
- Patent Title: Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming a perpendicular magnetic film of the same
- Patent Title (中): 磁存储器件，电子系统和包括其的存储卡，其制造方法和形成其相同的垂直磁性膜的方法
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Application No.: US13177115Application Date: 2011-07-06
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Publication No.: US08445981B2Publication Date: 2013-05-21
- Inventor: Woo Chang Lim , Jangeun Lee , SeChung Oh , Woojin Kim
- Applicant: Woo Chang Lim , Jangeun Lee , SeChung Oh , Woojin Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0070118 20100720
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/00
Abstract:
Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming perpendicular magnetic films are provided. The magnetic memory device may include a seed pattern on a substrate having a first crystal structure, a perpendicular magnetic pattern on the seed pattern having a second crystal structure, and an interlayer pattern between the seed pattern and the perpendicular magnetic pattern. The interlayer pattern may reduce a stress caused by a difference between horizontal lattice constants of the first and the second crystal structures.
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