Invention Grant
- Patent Title: Discontinuous thin semiconductor wafer surface features
- Patent Title (中): 不连续的薄半导体晶圆表面特征
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Application No.: US12437111Application Date: 2009-05-07
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Publication No.: US08445994B2Publication Date: 2013-05-21
- Inventor: Arvind Chandrasekaran
- Applicant: Arvind Chandrasekaran
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Michelle Gallardo
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A semiconductor wafer has a semiconductor substrate and films on the substrate. The substrate and/or the films have at least one etch line creating a discontinuous surface that reduces residual stress in the wafer. Reducing residual stress in the semiconductor wafer reduces warpage of the wafer when the wafer is thin. Additionally, isolation plugs may be used to fill a portion of the etch lines to prevent shorting of the layers.
Public/Granted literature
- US20100283131A1 Discontinuous Thin Semiconductor Wafer Surface Features Public/Granted day:2010-11-11
Information query
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