Invention Grant
- Patent Title: Semiconductor device including double-sided multi-electrode chip embedded in multilayer wiring substrate
- Patent Title (中): 半导体器件包括嵌入在多层布线基板中的双面多电极芯片
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Application No.: US12785764Application Date: 2010-05-24
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Publication No.: US08446003B2Publication Date: 2013-05-21
- Inventor: Atsushi Komura , Yasuhiro Kitamura , Nozomu Akagi , Yasutomi Asai
- Applicant: Atsushi Komura , Yasuhiro Kitamura , Nozomu Akagi , Yasutomi Asai
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2009-125738 20090525; JP2010-112430 20100514
- Main IPC: H01L23/485
- IPC: H01L23/485 ; H01L23/367

Abstract:
A semiconductor device includes a multilayer wiring substrate and a double-sided multi-electrode chip. The double-sided multi-electrode chip includes a semiconductor chip and has multiple electrodes on both sides of the semiconductor chip. The double-sided multi-electrode chip is embedded in the multilayer wiring substrate in such a manner that the double-sided multi-electrode chip is not exposed outside the multilayer wiring substrate. The electrodes of the double-sided multi-electrode chip are connected to wiring layers of the multilayer wiring substrate.
Public/Granted literature
- US20100295170A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-11-25
Information query
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