Invention Grant
- Patent Title: Interconnect structures
- Patent Title (中): 互连结构
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Application No.: US11747615Application Date: 2007-05-11
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Publication No.: US08446012B2Publication Date: 2013-05-21
- Inventor: Chen-Hua Yu , Hai-Ching Chen , Tien-I. Bao
- Applicant: Chen-Hua Yu , Hai-Ching Chen , Tien-I. Bao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor structure includes a first dielectric layer over a substrate. At least one first conductive structure is within the first dielectric layer. The first conductive structure includes a cap portion extending above a top surface of the first dielectric layer. At least one first dielectric spacer is on at least one sidewall of the cap portion of the first conductive structure.
Public/Granted literature
- US20080277797A1 INTERCONNECT STRUCTURES Public/Granted day:2008-11-13
Information query
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