Invention Grant
- Patent Title: Piezoelectric thin-film element and piezoelectric thin-film device
- Patent Title (中): 压电薄膜元件和压电薄膜器件
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Application No.: US13636883Application Date: 2011-03-24
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Publication No.: US08446074B2Publication Date: 2013-05-21
- Inventor: Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
- Applicant: Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
- Applicant Address: JP Tokyo
- Assignee: Hitachi Cable Ltd.
- Current Assignee: Hitachi Cable Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Fleit Gibbons Gutman Bongini & Bianco PL
- Agent Marty Fleit; Paul D. Bianco
- Priority: JP2010-070361 20100325
- International Application: PCT/JP2011/057117 WO 20110324
- International Announcement: WO2011/118686 WO 20110929
- Main IPC: H01L41/187
- IPC: H01L41/187
Abstract:
There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.
Public/Granted literature
- US20130009519A1 PIEZOELECTRIC THIN-FILM ELEMENT AND PIEZOELECTRIC THIN-FILM DEVICE Public/Granted day:2013-01-10
Information query
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