Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12816436Application Date: 2010-06-16
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Publication No.: US08446180B2Publication Date: 2013-05-21
- Inventor: Yoichi Takano
- Applicant: Yoichi Takano
- Applicant Address: JP Tokyo
- Assignee: Mitsumi Electric Co., Ltd.
- Current Assignee: Mitsumi Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2009-156607 20090701
- Main IPC: H03K5/153
- IPC: H03K5/153

Abstract:
A disclosed semiconductor device includes an input terminal, a power line, a pnp-bipolar transistor connected to the power line, a first resistor connecting an emitter of the transistor to the input terminal, a second resistor connecting a collector of the transistor to ground, an operation circuit operable when the input voltage is a predetermined voltage or higher, the predetermined voltage being set within a first voltage region in which the input voltage cannot turn on the transistor, a comparator comparing an internal voltage with a reference voltage, the internal voltage being changed from a voltage value in a non-conductive state in which the transistor is not turned on, and an output terminal configured to output an output voltage which changes in response to a result of comparing the internal voltage with the reference voltage.
Public/Granted literature
- US20110001517A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-01-06
Information query
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