A load driving circuit in which the off-time Toff and the fall time Tf can be improved in turn-off operation of the N-channel type MOSFET used as a high side switch. The load driving circuit uses an N-channel type power MOSFET as a high side switch connected between a power supply and a load, including a comparator circuit for comparing a gate voltage of the power MOSFET with a power-supply voltage; and a shut-off circuit for discharging the gate terminal of the power MOSFET in turn-off operation of the power MOSFET, the rate of discharging the gate terminal of the power MOSFET performed with the shut-off circuit being set such that the discharge rate provided if the gate voltage Vg is lower than the power-supply voltage Vp is slower than the rate of discharging the same provided if the gate voltage Vg is higher than the power-supply voltage Vp.