Invention Grant
- Patent Title: Internal voltage generation circuit
- Patent Title (中): 内部电压产生电路
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Application No.: US13187621Application Date: 2011-07-21
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Publication No.: US08446211B2Publication Date: 2013-05-21
- Inventor: Sang Don Lee
- Applicant: Sang Don Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0039471 20110427
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
An internal voltage generation circuit includes a first detection unit, a second detection unit, a control unit, and a voltage pumping unit. The first detection unit compares an internal voltage with a first reference voltage to generate a first detection signal when the first detection unit is activated in response to a first enable signal. The second detection unit compares the internal voltage with a second reference voltage to generate a second detection signal. The control unit generates the first enable signal and a second enable signal in response to the first detection signal and the second detection signal. The voltage pumping unit generates the internal voltage in response to the second enable signal.
Public/Granted literature
- US20120274380A1 INTERNAL VOLTAGE GENERATION CIRCUIT Public/Granted day:2012-11-01
Information query
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