Invention Grant
US08446764B2 Control voltage generation circuit and non-volatile memory device including the same
有权
控制电压发生电路和非易失性存储器件包括相同的
- Patent Title: Control voltage generation circuit and non-volatile memory device including the same
- Patent Title (中): 控制电压发生电路和非易失性存储器件包括相同的
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Application No.: US13101522Application Date: 2011-05-05
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Publication No.: US08446764B2Publication Date: 2013-05-21
- Inventor: Lee-Hyun Kwon
- Applicant: Lee-Hyun Kwon
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0007738 20110126
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A control voltage generation circuit for generating a control voltage for controlling a high-voltage transistor includes an input node configured to receive a first enable signal; an output node configured to generate the control voltage, a transferor configured to transfer a voltage of the input node to the output node in response to a transfer signal, an enabling voltage driver configured to drive the output node with a high voltage when the first enable signal is enabled, and a disabling voltage driver configured to drive the output node with a negative voltage when a second enable signal is enabled in a negative mode.
Public/Granted literature
- US20120188822A1 CONTROL VOLTAGE GENERATION CIRCUIT AND NON-VOLATILE MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2012-07-26
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