Invention Grant
US08446778B2 Method for operating a flash memory device 有权
操作闪存设备的方法

Method for operating a flash memory device
Abstract:
A charge trap flash memory device is capable of preventing a data retention fail by ensuring a data retention margin. A method for operating the charge trap flash memory device is provided. A selected memory cell is programmed using a program voltage. The selected memory cell is verified using a first program verify voltage. Date retention states of selected memory cell having passed the program verify step are verified using a retention verify voltage. A read step of determining a program pass or fail by reading data of the selected memory cell having passed the retention verify step is performed using a read voltage.
Public/Granted literature
Information query
Patent Agency Ranking
0/0