Invention Grant
- Patent Title: Method for operating a flash memory device
- Patent Title (中): 操作闪存设备的方法
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Application No.: US12650787Application Date: 2009-12-31
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Publication No.: US08446778B2Publication Date: 2013-05-21
- Inventor: Se Jun Kim
- Applicant: Se Jun Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2009-0000913 20090106
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A charge trap flash memory device is capable of preventing a data retention fail by ensuring a data retention margin. A method for operating the charge trap flash memory device is provided. A selected memory cell is programmed using a program voltage. The selected memory cell is verified using a first program verify voltage. Date retention states of selected memory cell having passed the program verify step are verified using a retention verify voltage. A read step of determining a program pass or fail by reading data of the selected memory cell having passed the retention verify step is performed using a read voltage.
Public/Granted literature
- US20100172185A1 Method for Operating a Flash Memory Device Public/Granted day:2010-07-08
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