Invention Grant
- Patent Title: Global line sharing circuit of semiconductor memory device
- Patent Title (中): 半导体存储器件的全局线共享电路
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Application No.: US12977752Application Date: 2010-12-23
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Publication No.: US08446789B2Publication Date: 2013-05-21
- Inventor: Chun-Seok Jeong
- Applicant: Chun-Seok Jeong
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0029591 20100331
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A global line sharing circuit of a semiconductor memory device includes: a ZQ calibration unit configured to adjust an impedance of a DQ output driver; a test unit configured to control a test operation; and a shared global line coupled to and used in common by the ZQ calibration unit and the test unit.
Public/Granted literature
- US20110242918A1 GLOBAL LINE SHARING CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-10-06
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