Invention Grant
US08446790B2 Circuit for supplying a reference voltage in a semiconductor memory device for testing an internal voltage generator therein
有权
用于在半导体存储器件中提供参考电压的电路，用于测试其中的内部电压发生器
- Patent Title: Circuit for supplying a reference voltage in a semiconductor memory device for testing an internal voltage generator therein
- Patent Title (中): 用于在半导体存储器件中提供参考电压的电路，用于测试其中的内部电压发生器
-
Application No.: US13190103Application Date: 2011-07-25
-
Publication No.: US08446790B2Publication Date: 2013-05-21
- Inventor: Khil-Ohk Kang
- Applicant: Khil-Ohk Kang
- Applicant Address: KR
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR
- Agency: Baker & McKenzie LLP
- Priority: KR10-2007-0114974 20071112
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
A reference voltage supplying circuit can include an internal reference voltage generating unit configured to generate an internal reference voltage, a pad configured to receive an external reference voltage, a switching unit selectively configured to supply the internal reference voltage or the external reference voltage to an internal voltage generator in a test mode.
Public/Granted literature
Information query
