Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US12888822Application Date: 2010-09-23
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Publication No.: US08448034B2Publication Date: 2013-05-21
- Inventor: Shigehiro Asano , Kenichiro Yoshii , Kazuhiro Fukutomi , Shinichi Kanno
- Applicant: Shigehiro Asano , Kenichiro Yoshii , Kazuhiro Fukutomi , Shinichi Kanno
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-029114 20100212
- Main IPC: H04L1/00
- IPC: H04L1/00 ; G06F11/00

Abstract:
According to one embodiment, a semiconductor memory device includes semiconductor memory chips in which data requested to be written. The data has one or more pieces of first data in a predetermined unit. The device includes a write controller that writes the first data and redundancy information calculated by using a predetermined number of pieces of the first data and used for correcting an error in the predetermined number of pieces of the first data into different semiconductor memory chips; and a storage unit that stores identification information and region specifying information so as to be associated with each other. The identification information associates the first data and the redundancy information, and the region specifying information specifies a plurality of storage regions in the semiconductor memory chips to which the pieces of the first data and the redundancy information associated with each other are written.
Public/Granted literature
- US20110202812A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-08-18
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