Invention Grant
US08448046B2 Memory access method capable of reducing usage rate of problematic memory blocks
有权
能够降低有问题的存储器块的使用率的存储器存取方法
- Patent Title: Memory access method capable of reducing usage rate of problematic memory blocks
- Patent Title (中): 能够降低有问题的存储器块的使用率的存储器存取方法
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Application No.: US12260139Application Date: 2008-10-29
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Publication No.: US08448046B2Publication Date: 2013-05-21
- Inventor: Chi-Hsiang Hung
- Applicant: Chi-Hsiang Hung
- Applicant Address: TW Jhubei, Hsinchu County
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Jhubei, Hsinchu County
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW97136853A 20080925
- Main IPC: G06F11/00
- IPC: G06F11/00

Abstract:
Methods and devices capable of erasing a flash memory evenly are provided, in which a flash memory comprises a data region with a plurality of data blocks and a spare region with a plurality of spare blocks, and a controller retrieves a corresponding data with a check code from a first data block of the flash memory according to a read command from a host, performs a predetermined check to the corresponding data by the check code, determines whether an error is correctable when a check result of the predetermined check represents that the error has occurred, and increases an erase count of the first data block by a predetermined value when the error is correctable.
Public/Granted literature
- US20100077132A1 MEMORY DEVICES AND ACCESS METHODS THEREOF Public/Granted day:2010-03-25
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