Invention Grant
- Patent Title: Fin transistor structure and method of fabricating the same
- Patent Title (中): 翅片晶体管结构及其制造方法
-
Application No.: US12937493Application Date: 2010-06-25
-
Publication No.: US08450813B2Publication Date: 2013-05-28
- Inventor: Zhijiong Luo , Haizhou Yin , Huilong Zhu
- Applicant: Zhijiong Luo , Haizhou Yin , Huilong Zhu
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Osha Liang LLP
- Priority: CN200910242768 20091216
- International Application: PCT/CN2010/074512 WO 20100625
- International Announcement: WO2011/072520 WO 20110623
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/02 ; H01L29/78 ; H01L21/336 ; H01L21/3205 ; H01L21/4763 ; H01L21/31 ; H01L21/469
Abstract:
There is provided a fin transistor structure and a method of fabricating the same. The fin transistor structure comprises a fin formed on a semiconductor substrate, wherein a bulk semiconductor material is formed between a portion of the fin serving as the channel region of the transistor structure and the substrate, and an insulation material is formed between remaining portions of the fin and the substrate. Thereby, it is possible to reduce the current leakage while maintaining the advantages of body-tied structures.
Public/Granted literature
- US20110298050A1 FIN TRANSISTOR STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-12-08
Information query
IPC分类:
