Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13047042Application Date: 2011-03-14
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Publication No.: US08450855B2Publication Date: 2013-05-28
- Inventor: Shoji Seta , Hideaki Ikuma
- Applicant: Shoji Seta , Hideaki Ikuma
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Sprinkle IP Law Group
- Priority: JP2010-127947 20100603
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52

Abstract:
A semiconductor device has a semiconductor substrate which has a plurality of pad electrodes provided on a top surface thereof and has an approximately rectangular shape; a rewiring layer which is provided with a plurality of contact wiring lines connected to the plurality of pad electrodes, is disposed on the semiconductor substrate through an insulating film, and has an approximately rectangular shape; and a plurality of ball electrodes which are provided on the rewiring layer. A plurality of first pad electrodes among the plurality of pad electrodes are arranged on an outer circumference of the semiconductor substrate to be along a first side of the semiconductor substrate, a plurality of first ball electrodes among the plurality of ball electrodes are arranged on an outer circumference of the rewiring layer to be along the first side, and any one of the plurality of first ball electrodes is connected to the first pad electrode positioned below the corresponding ball electrode through the contact wiring lines, and the first pad electrodes are not disposed on the lower side of the first ball electrodes positioned at an end of the first side.
Public/Granted literature
- US20110298127A1 Semiconductor Device Public/Granted day:2011-12-08
Information query
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