Invention Grant
- Patent Title: Piezoelectric device
- Patent Title (中): 压电元件
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Application No.: US13181546Application Date: 2011-07-13
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Publication No.: US08450904B2Publication Date: 2013-05-28
- Inventor: Takashi Iwamoto , Hajime Kando
- Applicant: Takashi Iwamoto , Hajime Kando
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Priority: JP2009-006546 20090115
- Main IPC: H03H9/25
- IPC: H03H9/25

Abstract:
A piezoelectric device includes IDT electrodes and solves various problems resulting from the IDT electrodes. The piezoelectric device has a configuration in which a piezoelectric thin-film and a support are bonded together such that the piezoelectric thin-film is supported by the support. IDT electrodes and interconnect electrodes are provided on a surface of the piezoelectric thin-film that is located on the support side. The piezoelectric thin-film includes a region in which the IDT electrodes are provided and on which no support is provided but an opening is formed. This allows the IDT electrodes and the piezoelectric thin-film and the IDT electrode-formed region of the piezoelectric thin-film to not be in contact with the support, thereby defining a membrane including only the piezoelectric thin-film and the IDT electrodes as elements, the piezoelectric thin-film and the IDT electrodes being disposed therein and being important for properties of the piezoelectric device.
Public/Granted literature
- US20110266918A1 PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE Public/Granted day:2011-11-03
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