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US08452369B2 CMOS compatible microneedle structures 有权
CMOS兼容微针结构

CMOS compatible microneedle structures
Abstract:
The present invention provides an electronic device for sensing and/or actuating, the electronic device comprising at least one microneedle (10) on a substrate (1), each of the microneedles (10) comprising at least one channel (7, 8) surrounded by an insulating layer (6). The present invention also provides a method for making such an electronic device for sensing and/or actuating.
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