Invention Grant
US08453319B2 Process for forming a hexagonal array 有权
形成六边形阵列的方法

Process for forming a hexagonal array
Abstract:
The present invention relates to nanopillar arrays that may have relatively large dimensions and relatively large interpillar distances. The present invention also relates to methods of forming the same. In some embodiments of the invention, methods of forming hexagonal nanopillar arrays include forming a base comprising aluminum; forming a hexagonal pattern of pits in the aluminum; anodizing the aluminum to form aluminum oxide comprising a primary hexagonal nanopore array at the positions of the pits in the aluminum; depositing a conductive material into the nanopores of the primary hexagonal nanopore array; and removing the mask and the aluminum oxide to provide the hexagonal nanopillar array.
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