Invention Grant
- Patent Title: Process for forming a hexagonal array
- Patent Title (中): 形成六边形阵列的方法
-
Application No.: US12825897Application Date: 2010-06-29
-
Publication No.: US08453319B2Publication Date: 2013-06-04
- Inventor: Guigen Zhang
- Applicant: Guigen Zhang
- Applicant Address: US SC Clemson
- Assignee: Clemson University Research Foundation
- Current Assignee: Clemson University Research Foundation
- Current Assignee Address: US SC Clemson
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01R43/00
- IPC: H01R43/00

Abstract:
The present invention relates to nanopillar arrays that may have relatively large dimensions and relatively large interpillar distances. The present invention also relates to methods of forming the same. In some embodiments of the invention, methods of forming hexagonal nanopillar arrays include forming a base comprising aluminum; forming a hexagonal pattern of pits in the aluminum; anodizing the aluminum to form aluminum oxide comprising a primary hexagonal nanopore array at the positions of the pits in the aluminum; depositing a conductive material into the nanopores of the primary hexagonal nanopore array; and removing the mask and the aluminum oxide to provide the hexagonal nanopillar array.
Public/Granted literature
- US20100326710A1 Mono-Domain Hexagonal Arrays of Nanopillars and Processes For Preparing the Same Public/Granted day:2010-12-30
Information query