Invention Grant
US08453656B2 Integrated processing and critical point drying systems for semiconductor and MEMS devices 有权
用于半导体和MEMS器件的集成处理和临界点干燥系统

  • Patent Title: Integrated processing and critical point drying systems for semiconductor and MEMS devices
  • Patent Title (中): 用于半导体和MEMS器件的集成处理和临界点干燥系统
  • Application No.: US13695784
    Application Date: 2010-06-25
  • Publication No.: US08453656B2
    Publication Date: 2013-06-04
  • Inventor: Anastasios J. Tousimis
  • Applicant: Anastasios J. Tousimis
  • Agency: Miles & Stockbridge P.C.
  • Agent Frederick F. Rosenberger
  • International Application: PCT/US2010/039980 WO 20100625
  • International Announcement: WO2011/162770 WO 20111229
  • Main IPC: B08B3/00
  • IPC: B08B3/00
Integrated processing and critical point drying systems for semiconductor and MEMS devices
Abstract:
Processing and drying of a sample, such as a semiconductor or MEMS device, is achieved using a single pressure chamber. The pressure chamber holds the sample in a sealed interior volume throughout various process steps, such as, but not limited to, photoresist removal, sacrificial layer etching, flushing or rinsing, dehydration, and critical point drying. The pressure chamber is constructed of a chemically-resistant and pressure-resistant material to withstand the various chemicals and pressures that are encountered in the various process and drying steps. For example, the pressure chamber is constructed from a nickel-copper alloy. Automated release etching and critical point drying of a MEMS or semiconductor device is provided without removing the device from the sealed pressure chamber.
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