Invention Grant
- Patent Title: Protective offset sputtering
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Application No.: US11262193Application Date: 2005-10-28
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Publication No.: US08454804B2Publication Date: 2013-06-04
- Inventor: Mengqi Ye , Zhendong Liu , Peijun Ding
- Applicant: Mengqi Ye , Zhendong Liu , Peijun Ding
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials Inc.
- Current Assignee: Applied Materials Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Konrad Raynes Davda & Victor LLP
- Main IPC: C23C14/35
- IPC: C23C14/35

Abstract:
Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.
Public/Granted literature
- US20070095650A1 Protective offset sputtering Public/Granted day:2007-05-03
Information query
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