Invention Grant
- Patent Title: Chamfering apparatus for silicon wafer, method for producing silicon wafer, and etched silicon wafer
- Patent Title (中): 硅晶片倒角装置,硅晶片制造方法和蚀刻硅晶片
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Application No.: US12448892Application Date: 2008-01-17
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Publication No.: US08454852B2Publication Date: 2013-06-04
- Inventor: Tadahiro Kato
- Applicant: Tadahiro Kato
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-21540 20070131
- International Application: PCT/JP2008/000035 WO 20080117
- International Announcement: WO2008/093488 WO 20080807
- Main IPC: B44C1/22
- IPC: B44C1/22

Abstract:
The invention is directed to a chamfering apparatus for a silicon wafer to chamfer outer edge of a silicon wafer by using a chamfering grindstone, the chamfering apparatus including at least: a holder holding and rotating a silicon wafer; a chamfering grindstone chamfering the outer edge of the silicon wafer held by the holder; and a control apparatus for controlling a chamfered shape by controlling a relative position of the outer edge of the silicon wafer and the chamfering grindstone by numerical control, wherein the control apparatus controls and changes the relative position of the outer edge of the silicon wafer and the chamfering grindstone at the time of chamfering depending on the circumferential position of the silicon wafer held by the holder, a production method, and an etched silicon wafer. This provides a silicon wafer chamfering apparatus, production method and an etched silicon wafer that can suppress variations in the cross-sectional shape dimensions of a chamfered portion after an etching process.
Public/Granted literature
- US20090324896A1 Chamfering Apparatus For Silicon Wafer, Method For Producing Silicon Wafer, And Etched Silicon Wafer Public/Granted day:2009-12-31
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