Invention Grant
US08454920B2 Silicon purification method 有权
硅精制法

  • Patent Title: Silicon purification method
  • Patent Title (中): 硅精制法
  • Application No.: US13058455
    Application Date: 2009-08-12
  • Publication No.: US08454920B2
    Publication Date: 2013-06-04
  • Inventor: Yasuo Ookubo
  • Applicant: Yasuo Ookubo
  • Applicant Address: JP Chigasaki-Shi
  • Assignee: ULVAC, Inc.
  • Current Assignee: ULVAC, Inc.
  • Current Assignee Address: JP Chigasaki-Shi
  • Agency: Grossman, Tucker, Perreault & Pfleger, PLLC
  • Priority: JPP2008-209218 20080815
  • International Application: PCT/JP2009/064266 WO 20090812
  • International Announcement: WO2010/018849 WO 20100218
  • Main IPC: C01B33/02
  • IPC: C01B33/02
Silicon purification method
Abstract:
A silicon purification method includes: loading a base material that is a starting material made of metallic silicon into a graphite crucible, heating and melting all of the base material which is disposed in an acidic inert gas atmosphere, maintaining the molten base material in the graphite crucible, and thereby oxidatively purifying the base material; loading the oxidatively-purified base material into a water-cooled crucible, gradually solidifying the base material after the base material disposed in a high vacuum atmosphere is fully molten, and thereby removing an unsolidified portion; and fully melting the base material which is disposed in a high vacuum atmosphere and in which the unsolidified portion is removed, and maintaining the base material in the water-cooled crucible.
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