Invention Grant
- Patent Title: Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
- Patent Title (中): 用于化学气相沉积，原子层沉积和快速气相沉积的锶前体
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Application No.: US12672684Application Date: 2008-08-03
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Publication No.: US08455049B2Publication Date: 2013-06-04
- Inventor: Thomas M. Cameron , Chongying Xu
- Applicant: Thomas M. Cameron , Chongying Xu
- Applicant Address: US CT Danbury
- Assignee: Advanced Technology Materials, Inc.
- Current Assignee: Advanced Technology Materials, Inc.
- Current Assignee Address: US CT Danbury
- Agency: Hultquist, PLLC
- Agent Steven J. Hultquist; Maggie Chappuis
- International Application: PCT/US2008/072045 WO 20080803
- International Announcement: WO2009/020888 WO 20090212
- Main IPC: C23C16/44
- IPC: C23C16/44 ; C07F3/00
Abstract:
A method of depositing a crystalline strontium titanate film on a substrate is provided, comprising carrying out an atomic layer deposition (ALD) process with strontium and titanium precursors, wherein the strontium precursor is bis(n-propyltetramethylcyclopentadienyl)strontium.
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