Invention Grant
US08455060B2 Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam
失效
使用气体团簇离子束沉积氢化金刚石样碳膜的方法
- Patent Title: Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam
- Patent Title (中): 使用气体团簇离子束沉积氢化金刚石样碳膜的方法
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Application No.: US12389010Application Date: 2009-02-19
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Publication No.: US08455060B2Publication Date: 2013-06-04
- Inventor: Martin D. Tabat
- Applicant: Martin D. Tabat
- Applicant Address: US MA Billerica
- Assignee: TEL Epion Inc.
- Current Assignee: TEL Epion Inc.
- Current Assignee Address: US MA Billerica
- Agency: Wood, Herron & Evans, LLP
- Main IPC: C23C14/28
- IPC: C23C14/28 ; H05B6/00 ; C23C16/00

Abstract:
A method for depositing a hydrogenated diamond-like carbon (H-DLC) film on a surface of a substrate. The method includes maintaining a reduced-pressure environment around a substrate holder for holding a substrate, holding the substrate securely within the reduced-pressure environment, and forming a gas cluster ion beam (GCIB) from a pressurized gas containing hydrocarbon gas and a carrier gas. The method further includes accelerating the GCIB to the reduced-pressure environment, irradiating the accelerated GCIB onto at least a portion of the surface of the substrate, and forming an H-DLC film on the surface.
Public/Granted literature
- US20100209627A1 METHOD FOR DEPOSITING HYDROGENATED DIAMOND-LIKE CARBON FILMS USING A GAS CLUSTER ION BEAM Public/Granted day:2010-08-19
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