Invention Grant
- Patent Title: Light emitting element and light emitting device using the same
- Patent Title (中): 发光元件及其使用的发光元件
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Application No.: US13525565Application Date: 2012-06-18
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Publication No.: US08455114B2Publication Date: 2013-06-04
- Inventor: Daisuke Kumaki , Satoshi Seo
- Applicant: Daisuke Kumaki , Satoshi Seo
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2004-322996 20041105; JP2004-342323 20041126
- Main IPC: H01L51/54
- IPC: H01L51/54

Abstract:
An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance with increase in film thickness. In an aspect of the invention, a light emitting element includes a first layer, a second layer and a third layer between mutually-facing first and second electrodes. The first layer is provided to be closer to the first electrode than the second layer. The third layer is provided to be closer to the second electrode than the second layer. The first layer contains a bipolar substance and a substance exhibiting an electron accepting ability with respect to the bipolar substance. The second layer contains a bipolar substance and a substance exhibiting an electron donating ability with respect to the bipolar substance. The third layer contains a light emitting substance.
Public/Granted literature
- US20120280266A1 Light Emitting Element and Light Emitting Device Using the Same Public/Granted day:2012-11-08
Information query
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