Invention Grant
US08455158B2 Method of manufacturing a substrate for a mask blank, method of manufacturing a mask blank, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权
用于掩模坯料的基板的制造方法,掩模坯料的制造方法,制造转印掩模的方法以及半导体器件的制造方法

  • Patent Title: Method of manufacturing a substrate for a mask blank, method of manufacturing a mask blank, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device
  • Patent Title (中): 用于掩模坯料的基板的制造方法,掩模坯料的制造方法,制造转印掩模的方法以及半导体器件的制造方法
  • Application No.: US13016645
    Application Date: 2011-01-28
  • Publication No.: US08455158B2
    Publication Date: 2013-06-04
  • Inventor: Masaru Tanabe
  • Applicant: Masaru Tanabe
  • Applicant Address: JP Tokyo
  • Assignee: Hoya Corporation
  • Current Assignee: Hoya Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2010-018283 20100129; JP2010-277846 20101214
  • Main IPC: G03F1/22
  • IPC: G03F1/22
Method of manufacturing a substrate for a mask blank, method of manufacturing a mask blank, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device
Abstract:
In a simulation step, based on information of a main surface shape of a transparent substrate and shape information of a mask stage of an exposure apparatus and using a deflection differential equation taking into account a twist deformation, height information at a plurality of measurement points is obtained by simulating a state where the transparent substrate is set in the exposure apparatus. Based on the height information obtained through the simulation, a flatness of the transparent substrate when it is set in the exposure apparatus is calculated in a flatness calculation step. Then, by judging in a selection step whether or not the calculated flatness satisfies a specification, the transparent substrate whose flatness satisfies the specification is used as a substrate for a mask blank.
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