Invention Grant
US08455182B2 Composition for antireflection film formation and method for resist pattern formation using the composition
有权
用于防反射膜形成的组合物和使用该组合物的抗蚀剂图案形成方法
- Patent Title: Composition for antireflection film formation and method for resist pattern formation using the composition
- Patent Title (中): 用于防反射膜形成的组合物和使用该组合物的抗蚀剂图案形成方法
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Application No.: US12451747Application Date: 2008-05-16
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Publication No.: US08455182B2Publication Date: 2013-06-04
- Inventor: Atsushi Sawano , Jun Koshiyama , Takako Hirosaki
- Applicant: Atsushi Sawano , Jun Koshiyama , Takako Hirosaki
- Applicant Address: JP Kanagawa
- Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee Address: JP Kanagawa
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2007-147410 20070601
- International Application: PCT/JP2008/059045 WO 20080516
- International Announcement: WO2008/146625 WO 20081204
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/30
Abstract:
A composition for forming an anti-reflection film for use in forming an anti-reflection film on a resist film is provided, the composition for forming an anti-reflection film being easily handled, and capable of forming an anti-reflection film having superior optical characteristics similarly to anti-reflection films formed using PFOS. A composition for forming an anti-reflection film to be provided on a resist film which includes a certain fluorine compound. This composition for forming an anti-reflection film can form an anti-reflection film having superior optical characteristics since the certain fluorine compound contributes to improvement of the optical characteristics of the anti-reflection film.
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Information query
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