A memory device and method for manufacturing the memory device are provided. The memory device including a first electrode, a first ferroelectric polymer layer over the first electrode, a second electrode over the first ferroelectric polymer layer, a second ferroelectric polymer layer over the second electrode, a third electrode over the second ferroelectric polymer layer, and a protective layer between the first and second ferroelectric polymer layers. The first, second and third electrodes and the first and second ferroelectric polymer layers define first and second ferroelectric capacitor structures, the second electrode being common to the first and second ferroelectric capacitor structures.