Invention Grant
- Patent Title: Magnetic tunnel junction device and fabrication
- Patent Title (中): 磁隧道连接装置及制造
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Application No.: US12465744Application Date: 2009-05-14
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Publication No.: US08455267B2Publication Date: 2013-06-04
- Inventor: Xia Li , Seung H. Kang , Xiaochun Zhu
- Applicant: Xia Li , Seung H. Kang , Xiaochun Zhu
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/44 ; H01L21/4763
Abstract:
A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction (MTJ) device on a structure that includes a bottom cap layer and a bottom metal-filled trench having a normal axis, the magnetic tunnel junction device including a bottom electrode, magnetic tunnel junction layers, a magnetic tunnel junction seal layer, a top electrode, and a logic cap layer, the magnetic tunnel junction device having an MTJ axis that is offset from the normal axis.
Public/Granted literature
- US20100289098A1 Magnetic Tunnel Junction Device and Fabrication Public/Granted day:2010-11-18
Information query
IPC分类:
