Invention Grant
- Patent Title: Method for manufacturing light emitting diode
- Patent Title (中): 制造发光二极管的方法
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Application No.: US13286090Application Date: 2011-10-31
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Publication No.: US08455274B2Publication Date: 2013-06-04
- Inventor: Pin-Chuan Chen , Hsin-Chiang Lin , Wen-Liang Tseng
- Applicant: Pin-Chuan Chen , Hsin-Chiang Lin , Wen-Liang Tseng
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Altis Law Group, Inc.
- Priority: CN201110067219 20110321
- Main IPC: H01L33/48
- IPC: H01L33/48

Abstract:
A method for manufacturing light emitting diodes includes steps: providing a substrate having an upper conductive layer and a lower conductive layer formed on a top face and bottom face thereof; dividing each of the upper conductive layer and the lower conductive layer into first areas and second areas; defining cavities in the substrate through the first areas of the upper conductive layer to expose the lower conductive layer; forming conductive posts within the substrate; forming an overlaying layer to connect the first areas of the upper and lower conductive layers; mounting chips on the overlaying layer within the cavities and electrically connecting each chip with an adjacent first area and post; forming an encapsulant on the substrate to cover the chips; and cutting the substrate into individual packages.
Public/Granted literature
- US20120244651A1 METHOD FOR MANUFACTURING LIGHT EMITTING DIODE Public/Granted day:2012-09-27
Information query
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