Invention Grant
- Patent Title: Method for manufacturing semiconductor device including microstructure
- Patent Title (中): 包括微结构的半导体器件的制造方法
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Application No.: US13219784Application Date: 2011-08-29
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Publication No.: US08455287B2Publication Date: 2013-06-04
- Inventor: Konami Izumi , Mayumi Yamaguchi
- Applicant: Konami Izumi , Mayumi Yamaguchi
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2005-156472 20050527
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for manufacturing a semiconductor device is provided, which includes the step of forming a microstructure comprising a layer containing silicon over a first substrate, the step of forming an interlayer insulating layer over the microstructure, the step of forming a connection conductive layer over the interlayer insulating layer, and the step of separating the microstructure from the first substrate.
Public/Granted literature
- US20110312118A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-12-22
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