Invention Grant
- Patent Title: Deposition of germanium film
- Patent Title (中): 沉积锗膜
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Application No.: US13229440Application Date: 2011-09-09
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Publication No.: US08455292B2Publication Date: 2013-06-04
- Inventor: Solomon Assefa , Pratik P. Joshi , Deborah A. Neumayer
- Applicant: Solomon Assefa , Pratik P. Joshi , Deborah A. Neumayer
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for forming a photodetector device includes forming waveguide feature on a substrate, and forming a photodetector feature including a germanium (Ge) film, the Ge film deposited on the waveguide feature using a plasma enhanced chemical vapor deposition (PECVD) process, the PECVD process having a deposition temperature from about 500° C. to about 550° C., and a deposition pressure from about 666.612 Pa to about 1066.579 Pa.
Public/Granted literature
- US20130065349A1 Deposition of Germanium Film Public/Granted day:2013-03-14
Information query
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