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US08455297B1 Method to fabricate high performance carbon nanotube transistor integrated circuits by three-dimensional integration technology 有权
通过三维集成技术制造高性能碳纳米管晶体管集成电路的方法

Method to fabricate high performance carbon nanotube transistor integrated circuits by three-dimensional integration technology
Abstract:
Techniques for fabricating carbon nanotube-based devices are provided. In one aspect, a method for fabricating a carbon nanotube-based integrated circuit is provided. The method comprises the following steps. A first wafer comprising carbon nanotubes is provided. A second wafer comprising one or more device elements is provided. One or more of the carbon nanotubes are connected with one or more of the device elements by bonding the first wafer and the second wafer together. A carbon nanotube-based integrated circuit is also provided.
Abstract(Chinese):

提供了制造基于碳纳米管的器件的技术。 一方面，提供一种制造碳纳米管集成电路的方法。 该方法包括以下步骤。 提供了包括碳纳米管的第一晶片。 提供包括一个或多个器件元件的第二晶片。 一个或多个碳纳米管通过将第一晶片和第二晶片结合在一起而与一个或多个器件元件连接。 还提供了一种基于碳纳米管的集成电路。

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