Invention Grant
- Patent Title: Method for manufacturing semiconductor wafer
- Patent Title (中): 制造半导体晶片的方法
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Application No.: US13201125Application Date: 2011-02-25
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Publication No.: US08455323B2Publication Date: 2013-06-04
- Inventor: Huicai Zhong , Qingqing Liang , Chao Zhao
- Applicant: Huicai Zhong , Qingqing Liang , Chao Zhao
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Kinney & Lange, P.A.
- Priority: CN201010591794 20101208
- International Application: PCT/CN2011/071303 WO 20110225
- International Announcement: WO2012/075735 WO 20120614
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
There is provided a method for manufacturing a semiconductor wafer, comprising: performing heating so that metals dissolve into semiconductors of the wafer to form a semiconductor-metal compound; and performing cooling so that the formed semiconductor-metal compound retrogradely melt to form a mixture of the metals and the semiconductors. According to embodiments of the present invention, it is possible to achieve wafers of a high purity applicable to the semiconductor manufacture.
Public/Granted literature
- US20120149181A1 METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER Public/Granted day:2012-06-14
Information query
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